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BUZ42

Intersil Corporation
Part Number BUZ42
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description BUZ42 Semiconductor Data Sheet October 1998 File Number 2417.1 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET Features...
Datasheet PDF File BUZ42 PDF File

BUZ42
BUZ42


Overview
BUZ42 Semiconductor Data Sheet October 1998 File Number 2417.
1 4A, 500V, 2.
000 Ohm, N-Channel Power MOSFET Features • 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.
000Ω (BUZ42 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power.
(4A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits.
500V, • High Input Impedance 2.
000 Formerly developmental type TA17415.
• Majority Carrier Device Ohm, N• Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ42 TO-220AB BUZ42 MOSNOTE: When ordering, use the entire part number.
FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSFET, SOURCE TODRAIN GATE 220AB) /Creator DRAIN (FLANGE) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ42 500 500 4.
0 16 ±20 75 300 0.
6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W mJ W/oC oC oC oC Drain to Source Breakdown Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Continuous Drain Current, TC = 55oC .
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ID Pulsed Drain Current (Note 3) .
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