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BUZ40B

INCHANGE
Part Number BUZ40B
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 18, 2020
Detailed Description isc N-Channel Mosfet Transistor BUZ40B ·FEATURES ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Lin...
Datasheet PDF File BUZ40B PDF File

BUZ40B
BUZ40B


Overview
isc N-Channel Mosfet Transistor BUZ40B ·FEATURES ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=35℃ 8.
5 A IDM Drain Current-Single Plused 34 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUZ40B MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.
25mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.
1 4.
0 V VSD Diode Forward On-voltage IS= 20A ;VGS= 0 1.
3 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5.
5A 0.
8 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 1 µA Gfs Forward Transconductance VDS= 25V；ID=5.
5A 5.
0 S td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time VGS=10V; ID=3A; VDD=30V; RGS=50Ω 30 110 ns 340 tf Fall Time 100 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information con...


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