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BUZ41A

Intersil Corporation
Part Number BUZ41A
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description BUZ41A Semiconductor Data Sheet October 1998 File Number 2256.1 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Featu...
Datasheet PDF File BUZ41A PDF File

BUZ41A
BUZ41A

Overview
BUZ41A Semiconductor Data Sheet October 1998 File Number 2256.
1 4.
5A, 500V, 1.
500 Ohm, N-Channel Power MOSFET Features • 4.
5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.
500Ω (BUZ41 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
ject • Linear Transfer Characteristics (4.
5A, This type can be operated directly from integrated circuits.
• High Input Impedance 500V, Formerly developmental type TA17415.
• Majority Carrier Device 1.
500 Ordering Information • Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards” BUZ41A TO-220AB BUZ41A nel Power NOTE: When ordering, use the entire part number.
Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB ChanSOURCE nel DRAIN Power GATE MOSDRAIN (FLANGE) FET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ41A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ20 500 500 4.
5 18 ±20 75 0.
6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC Drain to Source Breakdown Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Continuous Drain Current TC = 35oC.
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ID Pulsed Drain Current (Note 3) .
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