| Part Number | 2SD1294 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Included Avalanche Diode- : VZ= 60±15V ·High DC Current Gain : hFE= 2000~20000@ IC= 0.5A, VCE= 5V ·Minimum Lot-to-Lot variations for robust devic... |
| Features |
down Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 1mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
...
|
| File Size | 211.06KB |
| Datasheet |
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2SD129 : www.DataSheet4U.com www.DataSheet4U.com .
2SD1290 : ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 50 W 130 ℃ Tstg Storage Temperature Range -55-130 ℃ 2SD1290 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Si.
2SD1290 : ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 10 50 130 -55~130 UNIT V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power.
2SD1291 : ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 13 65 130 -55~130 UNIT V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power.
2SD1291 : ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 13 A 65 W 130 ℃ Tstg Storage Temperature Range -55-130 ℃ 2SD1291 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Si.
2SD1292 : www.DataSheet4U.com www.DataSheet4U.com .
2SD1293M : www.DataSheet4U.com www.DataSheet4U.com .
2SD1294 : .
2SD1294 : ·With TO-3P(I) package ·Wide area of safe operation ·High DC current gain ·Darlington APPLICATIONS ·Power regulator for line operated TV PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60±15 60±15 6 5 20 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Sil.
2SD1295 : Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 .
2SD1296 : ¡¤ With TO-3PN package ¡¤ High DC current gain ¡¤ Low saturation voltage APPLICATIONS ¡¤ For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak www.DataSheet4U.com CONDITIONS Open emitter Open base Open collector MAX 150 100 8 15 30 TC=25¡æ 100 W Ta=25¡æ 3.0 150 -55~150 ¡æ ¡æ UNIT V V V A A PT Total power dissipation Tj Tstg Junction temperature St.
2SD1296 : ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VCEO(SUS) Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current- Continuous Collector.
2SD1296 : h TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3.0 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 150 100 8 15 30 100 W UNIT V V V A A SavantIC Semiconductor Produ.
2SD1297 : ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current- Continuous Collector Power Dissipation @TC=25℃ PC Collector Powe.
2SD1297 : ·With TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3.0 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 150 100 8 25 50 1.5 100 W UNIT V V V A A A Sava.
2SD1298 : ·High DC Current Gain : hFE= 200(Min.)@ IC= 6A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temp.