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2SD1296

Part Number	2SD1296
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE=...
Datasheet	2SD1296 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.
)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VCEO(SUS) Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 15 A ICM Coll...

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