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2SD1291

Part Number	2SD1291
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum...
Datasheet	2SD1291 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 13 A 65 W 130 ℃ Tstg Storage Temperature Range -55-130 ℃ 2SD1291 isc website：www.
iscsemi.
com 1...

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