DatasheetsPDF.com

2SD1297

Part Number	2SD1297
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE=...
Datasheet	2SD1297 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.
)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current-...

Similar Datasheet

2SD1200 NPN Silicon Transistor - ROHM
2SD1202 NPN Transistor - INCHANGE
2SD1204 NPN Transistor - INCHANGE
2SD1205 Silicon NPN Transistor - Panasonic Semiconductor
2SD1205A Silicon NPN Transistor - Panasonic Semiconductor
2SD1207 PNP/NPN Transistors - Sanyo Semicon Device
2SD1207 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors - ON Semiconductor
2SD1208 NPN Transistor - Toshiba
2SD1208 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)