2SD662

2SD661 : Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 7 200 100 400 150 –55 ~ +150 Unit 3 2 1 V 2.5 2.5 emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current C.

2SD661 : Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 7 200 100 400 150 –55 ~ +150 Unit 3 2 1 V 2.5 2.5 emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current C.

2SD661A : Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.9±0.1 0.4 q q q 2.4±0.2 2.0±0.2 3.5±0.1 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) 1.0 s 2.5±0.1 1.0 Features 1.5 1.5 R0.9 R0.9 1.0±0.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.85 0.55±0.1 1.25±0.05 0.45±0.05 Ratings –35 –55 –35 –55 –5 –200 –50 400 150 –55 ~ +150 Unit V 3 2.

2SD661A : Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.9±0.1 0.4 q q q 2.4±0.2 2.0±0.2 3.5±0.1 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) 1.0 s 2.5±0.1 1.0 Features 1.5 1.5 R0.9 R0.9 1.0±0.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.85 0.55±0.1 1.25±0.05 0.45±0.05 Ratings –35 –55 –35 –55 –5 –200 –50 400 150 –55 ~ +150 Unit V 3 2.

2SD662 : www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 .

2SD662B : Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit 3 0.55±0.1 1.25±0.05 0.45±0.05 2 1 V 2.5 2.5 emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold .

2SD662B : www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 .

2SD663 : ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 500 VEBO Emitter-Base Voltage 7 IC Collector Current 6 ICM Collector Current-peak 8 IB Base Current 0.5 PC Collector Power Dissipation @TC=25℃ 80 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150.

2SD664 : SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3A) • Low Saturation Voltage • V C E( S at) =1 - 5v (Max.)(I c=3A) • Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASEo SYMBOL VcBO VCEO VEBO ic PC T stg RATING 80 80 UNIT 0.2 40 150 -65M.50 OLLECTOR 1 BASE Z EMITTER COLLECTOR(CASE) TO — 66 TC — 16A, TB Mo.

2SD665 : ·With TO-3 package ·Complement to type 2SB645 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 5 15 4 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transi.

2SD665 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Complement to Type 2SB645 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 200W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Tempe.

2SD666 : http://www.Datasheet4U.com .

2SD666A : http://www.Datasheet4U.com .

2SD667 : 2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) REJ03G0769-0200 (Previous ADE-208-1137) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 –55 to +150 2SD667A 120 100 5 1 2 0.9 150 –50 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page.

2SD667 : www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 2SD667 2SD667A VEBO IC PC TJ Tstg Value 120 80 100 5 1 900 150 -55-150 Units V V V A mW ℃ ℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base br.

2SD667 : 2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) REJ03G0769-0200 (Previous ADE-208-1137) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 –55 to +150 2SD667A 120 100 5 1 2 0.9 150 –50 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page.