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2SD662B

Panasonic Semiconductor
Part Number 2SD662B
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 30, 2005
Detailed Description Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm ...
Datasheet PDF File 2SD662B PDF File

2SD662B
2SD662B

Overview
Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.
9±0.
1 1.
5 2.
5±0.
1 1.
0 1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1 s Features q q q 1.
5 R0.
9 R0.
9 0.
85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit 3 0.
55±0.
1 1.
25±0.
05 0.
45±0.
05 2 1 V 2.
5 2.
5 emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD662 2SD662B (Ta=25˚C) Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 100V, IB = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 10 200 400 5 30 30 220 150 1.
2 V MHz pF min typ max 2 Unit µA V V Emitter to base voltage Forward current transfer ratio 2SD662 2SD662B Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank 4.
1±0.
2 High collector to emitter voltage VCEO.
High transition frequency fT.
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.
4 1.
0±0.
1 R 0.
4.
5±0.
1 7 1 Transistor PC — Ta 800 120 Ta=25˚C 700 100 1.
8mA 1.
6mA 1.
4mA 1.
2mA 1.
0mA 0.
8mA IB=2.
0mA 100 2SD662, 2SD662B IC — VCE 120 VCE=10V 25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 600 500 400 300 200 100 0 0 40 80 120 160 200 Collector current IC (mA) Ta=75˚C 80 –25˚C 80 60 0.
6mA 0.
4mA 60 40 0.
2mA 20 40 20 0 0 2 4 6 8 10 0 0 0.
4 0.
8 1.
2 1.
6 2.
0 Ambient temperature Ta (...


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