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2SD662

Part Number	2SD662
Manufacturer	Panasonic Semiconductor
Description	Silicon NPN Transistor
Published	Sep 9, 2011
Detailed Description	www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdo...
Datasheet	2SD662 PDF File

Overview

www.
DataSheet4U.
net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.
9±0.
1 2.
5±0.
1 (1.
0) Unit: mm (0.
4) (1.
5) 2.
0±0.
2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.
5±0.
1 (1.
0) 2.
4±0.
2 0.
45±0.
05 1 ■ Features (1.
5) R 0.
9 R 0.
7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.
0±0.
1 (0.
85) Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature 3 (2.
5) 2 (2.
5) 1.
25±0.
05 0.
55±0.
1 1: Base 2: Collector 3: Emitter M-A1 Package ■ Electrical Characteristi...

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