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2SD664

Part Number	2SD664
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain ...
Datasheet	2SD664 PDF File

Overview

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : hFE=2000(Min.
)(VCE=3V, I C=3A) • Low Saturation Voltage • V C E( S at) =1 - 5v (Max.
)(I c=3A) • Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor.
Unit in mm 015.
7MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASEo SYMBOL VcBO VCEO VEBO ic PC T stg RATING 80 80 UNIT 0.
2 40 150 -65M.
50 OLLECTOR 1 BASE Z EMITTER COLLECTOR(CASE) TO — 66 TC — 16A, TB Mounting Kit No.
AC74 Weight : 5.
9g ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage (Ta=25°c) SYMBOL ICBO I EB0 V (BR...

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