2SD1853

2SD1850 : ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 3 W 120 150 ℃ Tstg Storage Temperature .

2SD1851 : Ordering number:EN2553A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1234/2SD1851 Driver Applications Features · AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. · Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1234/2SD1851] ( ) : 2SB1234 C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions.

2SD1852 : Ordering number:EN2554A Features · AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Package Dimensions unit:mm 2033 [2SB1235/2SD1852] ( ) : 2SB1235 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Curren.

2SD1854 : .

2SD1855 : ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1855 isc website：www.iscsemi.com 1 isc & .

2SD1855 : ·With TO-220Fa package ·Complement to type 2SB1335 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 6 4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwis.

2SD1856 : ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 2A ·Bullt-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forr Motor，Relay and Solenoid driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2 W 25 150 ℃ Tstg Storage Temperature .

2SD1856 : .

2SD1857 : Power Transistor (120V, 2A) 2SD1857 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. Dimensions (Unit : mm) 2SD1857 6.8 2.5 1.0 0.9 14.5 4.4 0.65Max. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 ROHM : ATV Taping specifications (1) Emitter (2) Collector (3) Base Packaging specifications and hFE Type Package Code hFE Basic ordering unit (pieces) 2SD1857 QR Taping TV2 2500 hFE values are classified as follows: Item hFE QR 120 to 270 180 to 390 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage VCBO 120 Coll.

2SD1857 : TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ，，。 High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,,。 Power supplies, relay drivers, lamp drivers, and automotive wiring. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 R 180～390 http://www.fsbrec.com 1/6 2SD1857 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Di.

2SD1857 : ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SB1236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150.

2SD1857 : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R201-057.N .

2SD1857A : 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !External dimensions (Units : mm) 2SD2211 1.0 1.5 0.4 (1) 4.0 2.5 0.5 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1857A Collector power dissipation 2SD2211 2SD1918 Tj Tstg PC Symbo.

2SD1857D : TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package.  / Features ，，。 High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,,。 Power supplies, relay drivers, lamp drivers, and automotive wiring. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 R 180～390 http://www.fsbrec.com 1/6 2SD1857D Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Curre.

2SD1858 : Medium Power Transistor (32V, 1A) 2SD1858 Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1237 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 6.8 +− 0.2 2.5 +− 0.2 4.4 −+ 0.2 1.0 0.9 14.5 −+0.5 0.5+− 0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45 +− 0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current 1 A (DC) IC 2 A (Pulse) ∗1 Collector power dissipation PC 1 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −5.

2SD1858 : TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features , 2SB1237 。 Low saturation voltage, complements the 2SB1237. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 R 180～390 http://www.fsbrec.com 1/7 2SD1858 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol.