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2SD1850

Part Number	2SD1850
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ...
Datasheet	2SD1850 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Tempera...

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