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2SD1856

Part Number	2SD1856
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1856 DESCRIPTION ·High DC Current Gain : hFE= 20...
Datasheet	2SD1856 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1856 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.
5V(Max.
)@ IC= 2A ·Bullt-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forr Motor，Relay and Solenoid driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipat...

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