DatasheetsPDF.com

2SD1857

Part Number	2SD1857
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 16, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance....
Datasheet	2SD1857 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage.
(BVCEO = 120V) ·Low collector output capacitance.
·High transition frequency.
(fT = 50MHz) ·Complement to Type 2SB1236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICP Collector Current-Pulse 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 15...

Similar Datasheet

2SD180 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1800 NPN Epitaxial Silicon Transistor - Sanyo Semicon Device
2SD1801 Bipolar Transistor - ON Semiconductor
2SD1801 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD1802 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1802 NPN Transistor - TRANSYS
2SD1802 NPN Epitaxial Planar Silicon Transistors - GME
2SD1802 Bipolar Transistor - ON Semiconductor
2SD1802 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)