R6513

R6511ENJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 124 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6511ENJ ELECTRICAL CHARACTERISTICS TC=25℃ unless ot.

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R6511ENX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 53 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6511ENX ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.

R6511ENX : R6511ENX 　　Nch 650V 11A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.4Ω ID ±11A TO-220FM PD 53W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±11 A ±33 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, s.

R6511KNJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 124 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6511KNJ ELECTRICAL CHARACTERISTICS TC=25℃ unless ot.

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R6511KNX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 53 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6511KNX ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.

R6511KNX : R6511KNX 　　Nch 650V 11A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.40Ω ID ±11A TO-220FM PD 53W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS complian lInner circuit lApplication Switching applications lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±11 A ±33 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V A.

R6511Q : '1'Rockwell R6511Q • R6500/13 R6500 Microcomputer System R6511Q One-Chip Microprocessor and R6500/13 One-Chip Microcomputer SECTION 1 INTRODUCTION 1.1 FEATURES • Enhanced 6502 CPU -Four new bit manipulation instructions • Set Memory Bit (SMB) • Reset Memory Bit (RMB) • Branch on Bit Set (BBS) • Branch on Bit Reset (BBR) -Decimal and binary arithmetic modes -13 addressing modes -True indexing • 256-byte.mask-programmable ROM or no ROM' • 192-byte static RAM • 32 bidirectional, TIL-compatible I/O lines (four ports) • One 8-bit port may be tri-stated under software control • One 8-bit port may have latched inputs under software control • Two 16-bit programmable counter/timers, with latches -.

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R6515ENJ : R6515ENJ 　　Nch 650V 15A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.315Ω ±15A 184W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S) 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6515ENJ Basic ordering unit (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±15 A ±45 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche cu.

R6515ENJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 184 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.68 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6515ENJ ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.

R6515ENX : R6515ENX 　　Nch 650V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 650V 0.315Ω ±15A 60W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-220FM 　 　　　　　　 lInner circuit 　 lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±15 A ±45 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalan.

R6515ENX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 60 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.1 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6515ENX ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.