STP33N10

STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI VDSS 100 V 100 V R DS( on) 0.06 Ω 0.06 Ω ID 33 A 18 A s TYPICAL RDS(on) = 0.045 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICA...