INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2N3019
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
1A
PC Collector Power Dissipation@TC=25℃ 5
W
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Rth j-c
Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case
MAX 217 35
UNIT ℃/W ℃/W
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
isc Product Specification
2N3019
ELECTRICAL CHARACTERISTICS
TC=2...