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2N3009

Motorola
Part Number 2N3009
Manufacturer Motorola
Description NPN Transistor
Published Nov 6, 2018
Detailed Description 2N3009 (SILICON) 2N3013 2N3013JAN AVAILABLE 2N3014 NPN silicon epitaxial switching transistors designed for high-spe...
Datasheet PDF File 2N3009 PDF File

2N3009
2N3009

Overview
2N3009 (SILICON) 2N3013 2N3013JAN AVAILABLE 2N3014 NPN silicon epitaxial switching transistors designed for high-speed, medium-power saturated switching applications MAXIMUM RATINGS CASE 27 (TO·52) Collector Connected to Case Rating Collector-Emitter Voltage2N3009, 2N3013 2N3014 Collector-Emitter Voltage Symbol VCEO * VCES Collector-Base Voltage VCB Emitter-Base Voltage 2N3009 2N3013.
2N3014 YEB Collector Current - Continuous (lOlls pulse) Peak Total Device DiSSiPation@TA • 25'C Derate above 25' C IC PD Total Device DiSSipation@TC • 25' C @TC = 100'C Derate above 2SoC PD Operating and Storage Junction Temperature Range TJ, Tstg * Applicable from 0.
01 mA to 10 mA (Pulsed) Value 15 20 40 40 4,0 5.
0 200 500 0.
36 2.
06 1.
20 0.
68 6.
85 -65 to +200 Unit Vdc Vdc Ydc Vdc mAdc Watt mW/'C Watts Watt mW/'C ·C FIGURE 1 - TURN·ON AND TURN·OFF TIME TEST CIRCUIT VBB IV in Zin =50 ~ 0•.
1 Rl /IF ~t-3.
.
.
.
""R",4-+-£.
.
TO SAMPLING SCOPE Input Z '" 100 kn Type 2N3009 2N30...


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