isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC5064
DESCRIPTION ·Low Noise and High Gain
NF = 1.
1 dB TYP.
, ︱S21e︱2= 12 dB TYP.
@VCE = 5 V, f = 1.
0 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.
0
V
IC
Collector Current-Continuous
30
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
15
mA
0.
15
W
125
℃
Tstg
Storage T...