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2SC5002

Sanken electric
Part Number 2SC5002
Manufacturer Sanken electric
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=...
Datasheet PDF File 2SC5002 PDF File

2SC5002
2SC5002


Overview
2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5002 1500 800 6 7(Pulse14) 3.
5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25°C) 2SC5002 100max 1max 100max 800min 8min 4 to 9 5max 1.
5max 4typ 100typ Unit µA mA µA V sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.
2A IC=5A, IB=1.
2A VCE=12V, IE=–0.
5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.
8±0.
2 15.
6±0.
2 5.
5±0.
2 3.
45 ±0.
2 5.
5 ø3.
3±0.
2 1.
6 23.
0±0.
3 9.
5±0.
2 a b V V MHz pF 16.
2 1.
75 2.
15 1.
05 +0.
2 -0.
1 5.
45±0.
1 5.
45±0.
1 4.
4 1.
5 0.
65 +0.
2 -0.
1 3.
3 0.
8 3.
35 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
8 IB2 (A) –1.
6 tstg (µs) 4.
0max tf (µs) 0.
2max 1.
5 B C E Weight : Approx 6.
5g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 7 1.
5 A VCE(sat)–IC Characteristics (Typical) 3 (I C : I B = 5 :1) I C – V BE Temperature Characteristics (Typical) 7 (V CE =5V) 1.
2A 6 Collector Current I C (A) 700 mA 6 5 2 Collector Current I C (A) 4 400 mA 4 mp) mp) e Te 200m A 2 125˚C I B =100 mA 25˚C (C 2 1 0 0 1 2 3 4 0 0.
02 0.
1 0.
5 1 5 10 0 0 0.
5 –30˚C (Case 1 (Cas ase Te 3 Temp) 1.
0 3.
0 1.
5 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =5V) 100 20 t stg •t f – I C Characteristics (Typical) θ j- a (˚ C/W) .
V C C =200V .
I C : I B 1 : –I B 2 =5 :1: 2 3 θ j-a – t Characteristics t s tg • t f ( µ s) DC Curr ent Gain h FE 5 Transient Thermal Resistance 50 10 125˚C t stg 25˚ C 1 10 5...


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