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2SC5006

NEC
Part Number 2SC5006
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2...
Datasheet PDF File 2SC5006 PDF File

2SC5006
2SC5006

Overview
DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band.
Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.
FEATURES • Low Voltage Use.
• High fT • Low Cre • Low NF : 4.
5 GHz TYP.
(@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.
7 pF TYP.
(@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.
2 dB TYP.
(@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 1.
6 ± 0.
1 0.
8 ± 0.
1 PACKAGE DIMENSIONS in millimeters • High |S21e|2 : 9 dB TYP.
(@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 1.
6 ± 0.
1 1.
0 0.
5 0.
2+0.
1 –0 0.
5 ORDERING INFORMATION PART NUMBER 2SC5006 2SC5006-T1 3 1 QUANTITY 50 pcs.
/Unit 3 kpcs.
/Reel PACKING STYLE Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the tape.
0.
75 ± 0.
05 0.
6 * Please contact with responsible NEC person, if you require evaluation sample.
Unit sample quantity shall be 50 pcs.
1.
Emitter 2.
Base 3.
Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3.
0 100 125 150 –60 to +150 V V V mA mW ˚C ˚C Document No.
P10385EJ2V0DS00 (2nd edition) (Previous No.
TD-2399) Date Published July 1995 P Printed in Japan 0 to 0.
1 © 0.
15 +0.
1 –0.
05 0.
3 +0.
1 –0 • Ultra Super Mini Mold Package.
1993 2SC5006 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF 7.
0 80 3.
0 4.
5 0.
7 9.
0 1.
2 2.
5 1.
5 MIN.
TYP.
MAX.
1.
0 ...


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