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2SC5005

NEC
Part Number 2SC5005
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2...
Datasheet PDF File 2SC5005 PDF File

2SC5005
2SC5005

Overview
DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX.
It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package.
PACKAGE DIMENSIONS in millimeters 1.
6 ± 0.
1 0.
8 ± 0.
1 2 1.
6 ± 0.
1 1.
0 0.
2+0.
1 –0 0.
5 0.
3 +0.
1 –0 0.
15 +0.
1 –0.
05 FEATURES • • • High fT : 5.
5 GHz TYP.
(@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Low Cre : 0.
7 pF TYP.
(@ VCB = 5 V, IE = 0, f = 1 MHz) Ultra Super Mini Mold Package.
(1.
6 mm × 0.
8 mm) 0.
5 3 1 ORDERING INFORMATION 0.
6 PART NUMBER 2SC5005 2SC5005 – T1 QUANTITY 50 pcs.
/unit 3 kpcs.
/Reel PACKING STYLE Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of the tape.
0.
75 ± 0.
05 * Please contact with responsible NEC person, if you require evaluation sample.
Unit sample quantity shall be 50 pcs.
PIN CONNECTIONS 1.
Emitter 2.
Base 3.
Collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 30 100 125 –55 to +125 V V V mA mW °C °C Document No.
P10384EJ2V0DS00 (2nd edition) (Previous No.
TD-2429) Date Published July 1995 Printed in Japan 0 to 0.
1 © 1995 1992 2SC5005 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current Collector Saturation Voltage DC Current Gain Gain Bandwidth Product Feed–back Capacitance Insertion Power Gain *1 *2 SYMBOL ICBO IEBO V CE(sat) hFE fT Cre |S21e|2 5.
0 60 3.
0 5.
5 0.
7 0.
9 MIN.
TYP.
MAX.
0.
1 0.
1 0.
5 120 GHz pF dB UNIT TEST CONDITION VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA µA µA V VCE = 5 V, IC = 5 mA*1 VCE = 5 V, IC = 5 mA VCB = 5 V, IE = 0, f = 1 MHz *2 VCE = 5 V, IC = 5 mA, f = 1 GHz Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % The emitter ...


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