INCHANGE Semiconductor
isc Silicon
NPN RF
Transistor
isc RF Product Specification
2SC5086
DESCRIPTION ·Low Noise
NF = 1.
1dB TYP.
@ f = 1GHz ·High Gain
︱S21e︱2= 11dB TYP.
@ f = 1GHz
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO
Emitter-Base Voltage
3V
IC Collector Current-Continuous
80 mA
IB Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
40 mA 0.
1 W 125 ℃
Tstg Storage Temperature Range
-55~125
℃
isc website:www.
iscsemi.
cn
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INCHANGE Semiconductor
isc Silicon
NPN RF Tr...