isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC5218
DESCRIPTION ·High Gain Bandwidth Product
fT = 9 GHz TYP.
·High Gain, Low Noise Figure
PG = 13.
0 dB TYP.
, NF = 1.
2 dB TYP @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in VHF ~ UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
9
V
VEBO
Emitter-Base Voltage
1.
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.
15
W
150
℃
Tstg
Storage Temperature Range
-5...