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2SC5200A

JILIN SINO
Part Number 2SC5200A
Manufacturer JILIN SINO
Description Silicon NPN Transistor
Published Jul 10, 2016
Detailed Description NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications :VCEO=230V (...
Datasheet PDF File 2SC5200A PDF File

2SC5200A
2SC5200A


Overview
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications :VCEO=230V (min)  2SA1943A  100W (RoHS) Package TO-3PL(T) FEATURES High collector voltage:VCEO=230V (min) Complementary to 2SA1943A Recommended for 100-W high-fidelity audio frequency amplifier output RoHS product TO-247 1 BASE 2 ()COLLECTOR (HEAT SINK) 3 EMITTER ORDER MESSAGE Order codes Marking 2SC5200A-O-AL-N-D 2SC5200A-O-AL-N-B 2SC5200A-O-W -N-B 2SC5200 2SC5200 2SC5200 Halogen Free NO NO NO Package TO-3PL(T) TO-3PL(T) TO-247 Packaging Weight Foam Box Tube Tube 9.
53g(typ) 9.
53g(typ) 6.
03g(typ) :201602B 1/5 R 2SC5200A ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter — Collector- Base Voltage — Collector- Emitter Voltage — Emitter-Base Voltage Collector Current Base Current TO-247 Collector Dissipation(Tc=25℃) TO-3PL Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg Value 230 230 5 15 1.
5 120 160 150 -65~150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) ICBO IEBO V(BR)CEO hFE VCE(sat) VBE fT COb VCB=230V,IE=0 VEB=5V,IC=0 Ic=50mA,IB=0 VCE=5V,IC=1.
0A VCE=5V,IC=7.
0A IC=8.
0A,IB=0.
8A VCE=5V,IC=7.
0A VCE=5V, Ic=1.
0A VCE=10V, IE =0,f=1MHz - - 5.
0 - - 5.
0 230 - - 80 - 160 35 - - - - 3.
0 - - 1.
5 30 - - - 145 - Unit μA mA V V V MHz pF THERMAL CHARACTERISTIC Parameter Thermal Resistance Junction Case Thermal Resistance Junction Case Symbo TO-247 Rth(j-c) TO-3PL(T) Rth(j-c) min max Unit - 1.
042 ℃/W - 0.
781 ℃/W :201602B 2/5 DC corrent hFE Collector-emitter saturation voltage VCE(sat) (V) R ELECTRICAL CHARACTERISTICS (curves) 2SC5200A DC Current Gain 1000 Saturation Voltage 1.
2 Tc=100℃ 100 Tc=25℃ Common emitter 1.
0 IC/IB = 5 0.
8 Single pulse test Tc=100℃ 0.
6 0.
4 Common emitter VCE = 5 V Single pulse test 0.
2 1...



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