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2SC5200

Toshiba Semiconductor
Part Number 2SC5200
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High break...
Datasheet PDF File 2SC5200 PDF File

2SC5200
2SC5200

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.
5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 9.
75 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1994-09 1 2016-01-07 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 230 V, IE = 0 A IEBO VEB = 5 V, IC = 0 A V (BR) CEO IC = 50 mA, IB = 0 A hFE (1) VCE = 5 V, IC = 1 A (Note) hFE (2) VCE = 5 V, IC = 7 A VCE (sat) IC = 8 A, IB = 0.
8 A VBE VCE = 5 V, IC = 7 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0 A, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Marking 2SC5200 Min Typ.
Max Unit ― ― 5...


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