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2SC5200

Fairchild Semiconductor
Part Number 2SC5200
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Dec 10, 2008
Detailed Description 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose P...
Datasheet PDF File 2SC5200 PDF File

2SC5200
2SC5200


Overview
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : VCEO=250V • Wide S.
O.
A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1943/FJL4215.
• Thermal and electrical Spice models are available.
• Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter BVCBO BVCEO BVEBO IC IB PD Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Total Device Dissipation(TC=25°C) Derate above 25°C TJ, TSTG Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter RθJC Thermal Resistance, Junction to Case * Device mounted on minimum pad size hFE Classification Classification hFE1 R 55 ~ 110 © 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev.
C 1 January 2009 1 TO-264 1.
Base 2.
Collector 3.
Emitter Ratings 250 250 5 17 1.
5 150 1.
04 - 50 ~ +150 Units V V V A A W W/°C °C Max.
0.
83 Units °C/W O 80 ~ 160 www.
fairchildsemi.
com 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 DC Current Gain hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage fT ...



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