Part Number
|
HFU1N60F |
Manufacturer
|
SemiHow |
Description
|
600V N-Channel MOSFET |
Published
|
Jun 27, 2016 |
Detailed Description
|
HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEAT...
|
Datasheet
|
HFU1N60F
|
Overview
HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.
7 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD1N60F
1
2 3
HFU1N60F
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (T...
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