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HFU1N60

Part Number	HFU1N60
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFD1N60_HFU1N60 Dec 2005 HFD1N60 / HFU1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A FEATUR...
Datasheet	HFU1N60 PDF File

Overview

HFD1N60_HFU1N60 Dec 2005 HFD1N60 / HFU1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.
9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60 1 2 3 HFU1N60 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC...

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