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HFU1N65

SemiHow
Part Number HFU1N65
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A F...
Datasheet PDF File HFU1N65 PDF File

HFU1N65
HFU1N65

Overview
HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.
5 Ω ID = 0.
8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.
0 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 10.
5 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N65 1 2 3 HFU1N65 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – ...


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