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HFU1N65S

SemiHow
Part Number HFU1N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Ru...
Datasheet PDF File HFU1N65S PDF File

HFU1N65S
HFU1N65S

Overview
HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.
0 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 10.
5 Ω (Typ.
) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.
5 Ω ID = 0.
9 A D-PAK I-PAK 2 1 3 HFD1N65S 1 2 3 HFU1N65S 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25...


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