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Part Number
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HFS4N65F |
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Manufacturer
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SemiHow |
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Description
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N-Channel MOSFET |
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Published
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Jun 27, 2016 |
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Detailed Description
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HFS4N65F
July 2015
HFS4N65F
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Techno...
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Datasheet
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HFS4N65F
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Overview
HFS4N65F
July 2015
HFS4N65F
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 3.
0 ȍ 7\S #9GS=10V 100% Avalanche Tested
BVDSS = 650 V RDS(on) typ ȍ ID = 4 A
TO-220F
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)...
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