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HFS4N60

SEMIHOW
Part Number HFS4N60
Manufacturer SEMIHOW
Description 600V N-Channel MOSFET
Published Mar 11, 2015
Detailed Description HFS4N60 July 2005 HFS4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.0 A FEATURES  Originative ...
Datasheet PDF File HFS4N60 PDF File

HFS4N60
HFS4N60

Overview
HFS4N60 July 2005 HFS4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.
0 Ω ID = 4.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 2.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) IDM Drain Current – Pulsed (Note 1) VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 3) PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 600 4.
0* 2.
5* 16* ±30 240 4.
0 10 5.
5 33 0.
26 -55 to +150 300 Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Parameter Junction-to-Ambient Typ.
--- Max.
3.
79 62.
5 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W ◎ SEMIHOW REV.
A0,July 2005 HFS4N60 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.
0 A 2.
5 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS...


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