isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=3.
5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
3.
5
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
...