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2SK1402

Renesas
Part Number 2SK1402
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Jun 26, 2016
Detailed Description 2SK1402, 2SK1402A Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High s...
Datasheet PDF File 2SK1402 PDF File

2SK1402
2SK1402

Overview
2SK1402, 2SK1402A Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 REJ03G0942-0200 (Previous: ADE-208-1282) Rev.
2.
00 Sep 07, 2005 D G 1.
Gate 2.
Drain (Flange) 3.
Source S Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SK1402, 2SK1402A Absolute Maximum Ratings Item Drain to source voltage 2SK1402 2SK1402A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Drain to source 2SK1402 breakdown voltage 2SK1402A Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1402 current 2SK1402A Gate to source cutoff voltage Static drain to source on 2SK1402 state resistance 2SK1402A Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3.
Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 650 ±30 — — 2.
0 — — 2.
2 — — — — — — — — — Typ — — — — — — 1.
8 2.
0 3.
5 600 140 25 8 30 60 35 0.
9 300 Ratings 600 650 ±30 4 16 4 50 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Max — — — ±10 250 3.
0 2.
4 2.
6 — — — — — — — — — — (Ta = 25°C) Unit Test conditions V ID = 10 mA, VGS = 0 V IG = ±100 µA, VDS = 0 µA VGS = ±25 V, VDS = 0 µA VDS = 500 V, VGS = 0 VDS = 550 V, VGS = 0 V ID = 1 mA, VDS = 10 V Ω ID = 2 A, VGS = 10 V *3 S ID = 2 A, VDS = 10 V *3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID =...


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