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2SK1401

Hitachi Semiconductor
Part Number 2SK1401
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistanc...
Datasheet PDF File 2SK1401 PDF File

2SK1401
2SK1401


Overview
2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SK1401, 2SK1401A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 300 350 ±30 15 60 15 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1401, 2SK1401A Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1401 K1401A V(BR)GSS I GSS I DSS Symbol Min V(BR)DSS 300 350 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 240 V, VGS = 0 VDS = 280 V, VGS = 0 VGS(off) RDS(on) 2.
0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6 — — — — — — — — — — 0.
25 0.
30 9.
5 1250 420 70 15 80 100 55 1.
05 370 3.
0 0.
35 0.
40 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0, diF/dt = 100 A/µs I D = 8 A, VGS = 10 V, RL = 3.
75 Ω I D = 8 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 V *1 Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current K1401 K1401A Gate to source cutoff voltage Static drain to source K1401 on state resistance K1401A Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test 3 2SK1401, 2SK1401A Power vs.
Temperature Dera...


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