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2SK1400


Part Number 2SK1400
Manufacturer Hitachi Semiconductor
Title Silicon N-Channel MOSFET
Description 2SK1400, 2SK1400A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low...
Features




• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage ...

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2SK1400A : 2SK1400, 2SK1400A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1400 2SK1400A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 300 35.

2SK1401 : 2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1401, 2SK1401A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 300 350 ±30 .

2SK1401 : ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 300 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 15 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 .

2SK1401A : 2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1401, 2SK1401A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 300 350 ±30 .

2SK1401A : ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 15 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 .

2SK1402 : 2SK1402, 2SK1402A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1402, 2SK1402A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1402 2SK1402A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 600 65.

2SK1402 : 2SK1402, 2SK1402A Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1402, 2SK1402A Absolute Maximum Ratings Item Drain to source voltage 2SK1402 2SK1402A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage tempe.

2SK1402 : ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance.

2SK1402A : 2SK1402, 2SK1402A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1402, 2SK1402A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1402 2SK1402A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 600 65.

2SK1402A : ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance.

2SK1402A : 2SK1402, 2SK1402A Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1402, 2SK1402A Absolute Maximum Ratings Item Drain to source voltage 2SK1402 2SK1402A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage tempe.

2SK1403 : 2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1403 2SK1403A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 600 650 ±30 .

2SK1403 : ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and DC-DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1403 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃.

2SK1403A : 2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1403 2SK1403A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 600 650 ±30 .

2SK1403A : 2SK1403A Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0943-0300 Rev.3.00 May 15, 2006 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.3.00 May 15, 2006 page 1 of 6 2SK1403A Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Elec.

2SK1403A : ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and DC-DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1403A isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25.




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