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2SK1400

Hitachi Semiconductor
Part Number 2SK1400
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1400, 2SK1400A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistanc...
Datasheet PDF File 2SK1400 PDF File

2SK1400
2SK1400

Overview
2SK1400, 2SK1400A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1400 2SK1400A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 300 350 ±30 7 28 7 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1400, 2SK1400A Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1400 K1400A V(BR)GSS I GSS I DSS Symbol Min V(BR)DSS 300 350 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 240 V, VGS = 0 VDS = 280 V, VGS = 0 VGS(off) RDS(on) 2.
0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.
0 — — — — — — — — — — 0.
50 0.
60 5.
0 635 230 40 10 50 60 40 1.
0 240 3.
0 0.
70 0.
80 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.
5 Ω I D = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current K1400 K1400A Gate to source cutoff voltage Static drain to source K1400 on state resistance K1400A Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test 3 2SK1400, 2SK1400A Power vs.
Temperature Derat...


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