INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
2SK1486
DESCRIPTION ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage-
: VDSS=300 (Min)
APPLICATIONS ·High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃
Tj Max.
Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI T
300 V
±30
V
32 A
200 W 150 ℃ -55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
0.
625 ℃/W
Thermal Resistance,Junction to Ambient 35.
7 ℃/W
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