SMD Type
MOS Field Effect
Transistor 2SK2111
MOSFICET
Features
Low on-resistance RDS(on)=0.
6 MAX.
@VGS=4.
0V,ID=0.
5A High switching speed
SOT-89
4.
50+0.
1 -0.
1
1.
80+0.
1 -0.
1
12 3
0.
48+0.
1 -0.
1
0.
53+0.
1 -0.
1
+0.
12.
50 -0.
1
+0.
14.
00 -0.
1
Unit: mm 1.
50+0.
1
-0.
1
0.
44+0.
1 -0.
1
+0.
10.
80 -0.
1
+0.
12.
60 -0.
1
3.
00+0.
1 -0.
1
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation * Channel temperature Storage temperature * 16 cm2X0.
7mm,ceramic substrate used
Symbol VDSS VGSS ID Idp PD Tch Tstg
Rating 60 20 1.
0 2.
0 2.
0 150
-55 to +150
Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage...