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2SK2109

NEC
Part Number 2SK2109
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel ...
Datasheet PDF File 2SK2109 PDF File

2SK2109
2SK2109

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.
This product has a low ON resistance and superb switching and DC/DC converters.
characteristics and is ideal for driving the actuator, such as motors PACKAGE DIMENSIONS (in mm) 4.
5 ± 0.
1 1.
6 ± 0.
2 2.
5 ± 0.
1 4.
0 ± 0.
25 1.
5 ± 0.
1 0.
8 MIN.
S 0.
42 ±0.
06 D G FEATURES • Low ON resistance RDS(on) = 1.
0 Ω MAX.
@VGS = 4.
0 V, ID = 0.
3 A • High switching speed ton + toff < 100 ns • Low parasitic capacitance 0.
42 0.
47 ±0.
06 1.
5 ±0.
06 3.
0 0.
41+0.
03 –0.
05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Marking: NS ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.
7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 60 ± 20 ± 0.
5 ± 1.
0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.
0 150 –55 to +150 W ˚C ˚C Document No.
D11229EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 1996 2SK2109 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 25 V, ID = 0.
3 A VGS(on) = 10 V, RG = 10 Ω RL = 83 Ω TEST CONDITIONS VDS = 60 V, VGS = 0 VGS = ± 20 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.
3 A VGS = 4.
0 V, ID =0.
3 A VGS = 10 V, ID = 0.
3 A ...


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