INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
·FEATURES ·RDS(on) =1.
1Ω ·3.
8A and 275V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance
isc Product Specification
IRF626
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
275 ±20
V V
ID Drain Current-Continuous
3.
8 A
IDM Drain Current-Single Plused
15 A
PD Total Dissipation @TC=25℃
40 W
Tj Max.
Operating Junction Temp...