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IRF6100

International Rectifier
Part Number IRF6100
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jan 13, 2016
Detailed Description l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Sup...
Datasheet PDF File IRF6100 PDF File

IRF6100
IRF6100

Overview
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.
8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.
065Ω@VGS = -4.
5V 0.
095Ω@VGS = -2.
5V ID -5.
1A -4.
1A Description True chip-scale packaging is available from International Rectifier.
Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications.
These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.
G The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .
8mm.
Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current  Power Dissipationƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range D S FlipFET™ ISOMETRIC Max.
-20 ±5.
1 ±3.
5 ±35 2.
2 1.
4 17 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJA RθJ-PCB www.
irf.
com Parameter Junction-to-Ambientƒ Junction-to-PCB mounted Typ.
35 Max.
56.
5 ––– Units °C/W 1 07/13/06 IRF6100 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage ...


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