isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C
·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits and pulse-width-modulated
regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BUX18
250
VCEV
Collector-Emitter Voltage VBE= -1.
5V
BUX18A BUX18B
350 400
V
BUX18C 475
BUX18
200
BUX18A 275
VCEO(SUS) Collector-Emitter V...