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BUX11

SavantIC
Part Number BUX11
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 24, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX11 www.datasheet4u.com DESCRIPTION ·W...
Datasheet PDF File BUX11 PDF File

BUX11
BUX11


Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX11 www.
datasheet4u.
com DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING(see fig.
2) PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 tp=10ms Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 20 25 4 150 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.
17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.
2mA; IB=0 IE=50mA; IC=0 IC=6 A;IB=0.
6A IC=12 A;IB=1.
5 A IC=12 A;IB=1.
5 A VCE=250V;VBE=-1.
5V TC=125 VCE=160V;IB=0 VEB=5V; IC=0 IC=6A ; VCE=2V IC=12A ; VCE=4V IC=1A ; VCE=15V; f=10MHz 20 10 8.
0 MIN 200 7 TYP.
www.
datasheet4u.
com BUX11 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V V 0.
6 1.
5 1.
5 1.
5 6.
0 1.
5 1.
0 60 V V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=12A ;IB1=1.
5A VCC=150V IC=12A ;IB1=-IB2=1.
5A VCC=150V 1.
0 1.
8 0.
4 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com BUX11 Fig.
2 Outline dimensions 3 ...



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