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BUX10P

Inchange Semiconductor
Part Number BUX10P
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 2, 2016
Detailed Description isc Silicon NPN Power Transistor BUX10P DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot...
Datasheet PDF File BUX10P PDF File

BUX10P
BUX10P

Overview
isc Silicon NPN Power Transistor BUX10P DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 160 V 125 V 7 V 25 A 30 A 5 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX10P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.
6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A 1.
2 V VBE(sat) Base-Emitter Saturation Voltage IC= 20A ;IB= 2A 2.
0 V ICEO Collector Cutoff Current ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current VCE= 100V; IB= 0 VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TC=125℃ VEB= 5V; IC= 0 1.
5 mA 1.
5 6.
0 mA 1.
0 mA hFE-1 DC Current Gain IC= 10A; VCE= 2V 20 60 hFE-2 DC Current Gain IC= 20A; VCE= 4V 10 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 15V, ftest= 10MHz 8 MHz Switching Times ton Turn-on Time IC= 20A ;IB1= 2A; VCC= 30V 1.
5 μs ts Storage Time tf Fall Time IC= 20A ;IB1= -IB2= 2A; VCC= 30V 1.
2 μs 0.
3 μs NOTICE： ISC reserves the rights to make changes of the content herein ...


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