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BUX10

Semelab
Part Number BUX10
Manufacturer Semelab
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Published Oct 25, 2016
Detailed Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Sw...
Datasheet PDF File BUX10 PDF File

BUX10
BUX10

Overview
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability.
• Hermetic TO3 Metal package.
• Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 160V VCEX Collector – Emitter Voltage VBE = -1.
5V 160V VCEO Collector – Emitter Voltage 125V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 25A ICM Peak Collector Current tp = 10ms 30A IB Base Current 5A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 0.
85W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max.
1.
17 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and...


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