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MTE010N10E3

Part Number MTE010N10E3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8 N-Channel Enhancem...
Datasheet MTE010N10E3





Overview
CYStech Electronics Corp.
Spec.
No.
: C944E3 Issued Date : 2013.
11.
12 Revised Date : Page No.
: 1/8 N-Channel Enhancement Mode Power MOSFET MTE010N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 100V 70A 9.
6mΩ 10.
1mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol MTE010N10E3 Outline TO-220 G:Gate D:Drain S:Source Ordering Information Device Package MTE010N10E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound pr...






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