Part Number
|
MTE010N10E3 |
Manufacturer
|
Cystech Electonics |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Sep 4, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8
N-Channel Enhancem...
|
Datasheet
|
MTE010N10E3
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C944E3 Issued Date : 2013.
11.
12 Revised Date : Page No.
: 1/8
N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 BVDSS ID
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
100V 70A 9.
6mΩ 10.
1mΩ
Features
• Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package
Symbol
MTE010N10E3
Outline
TO-220
G:Gate D:Drain S:Source
Ordering Information
Device
Package
MTE010N10E3-0-UB-S
TO-220 (Pb-free lead plating package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound pr...
Similar Datasheet