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MTE010N10F3

Cystech Electonics
Part Number MTE010N10F3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9 N-Chann...
Datasheet PDF File MTE010N10F3 PDF File

MTE010N10F3
MTE010N10F3

Overview
CYStech Electronics Corp.
Spec.
No.
: C944F3 Issued Date : 2014.
06.
09 Revised Date : 2015.
09.
04 Page No.
: 1/9 N-Channel Enhancement Mode Power MOSFET MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit) RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package 100V 70A 9.
6mΩ 10.
1mΩ Symbol MTE010N10F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTE010N10F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE010N10F3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=25°C, VGS=10V(package limit) (Note 1) Pulsed Drain Current (Note 3) Continuous Drain Current @ TA=25°C (Note 2) Continuous Drain Current @ TA=70°C (Note 2) Avalanche Current (Note 3) Avalanche Energy @ L=100μH, ID=80A, RG=25Ω (Note 2) Repetitive Avalanche Energy@ L=0.
1mH (Note 3) Power Dissipation TC=25°C TC=100°C (Note 1) (Note 1) Power Dissipation TA=25°C TA=70°C (Note 2) (Note 2) Operating Junction and Storage Temperature Symbol VDS VGS ID IDM IDSM IAS EAS EAR PD PDSM Tj, Tstg Spec.
No.
: C944F3 Issued Date : 2014.
06.
09 Revised Date : 2015.
09.
04 Page No.
: 2/9 Limits 100 ±20 70 50 60 300 8 6.
5 80 320 15 150 75 2 1.
3 -55~+175 Unit V A mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1...


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