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MTE010N10E3

Cystech Electonics
Part Number MTE010N10E3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8 N-Channel Enhancem...
Datasheet PDF File MTE010N10E3 PDF File

MTE010N10E3
MTE010N10E3

Overview
CYStech Electronics Corp.
Spec.
No.
: C944E3 Issued Date : 2013.
11.
12 Revised Date : Page No.
: 1/8 N-Channel Enhancement Mode Power MOSFET MTE010N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 100V 70A 9.
6mΩ 10.
1mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol MTE010N10E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device Package MTE010N10E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE010N10E3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C944E3 Issued Date : 2013.
11.
12 Revised Date : Page No.
: 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C(silicon limit) Continuous Drain Current @ TC=100°C(silicon limit) Continuous Drain Current @ TC=25°C(package limit) (Note 1) Pulsed Drain Current (Note 3) Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Avalanche Current Avalanche Energy @ L=100μH, ID=80A, RG=25Ω Repetitive Avalanche Energy@ L=0.
1mH Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C (Note 2) (Note 2) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) Operating Junction and Storage Temperature Symbol VDS VGS ID IDM IDSM IAS EAS EAR PD PDSM Tj, Tstg Limits 100 ±20 70 50 60 300 8 6.
5 80 320 15 150 75 2 1.
3 -55~+175 Unit V A mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1) Thermal Resistance, Junction-to-ambient, max (Note 1) Symbol Rth,j-c Rth,j-a Value 1 15 62...


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